inchange semiconductor product specification silicon npn power transistors 2SD1263 2SD1263a description with to-220fa package high breakdown voltalge applications for power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SD1263 350 v cbo collector-base voltage 2SD1263a open emitter 400 v 2SD1263 250 v ceo collector-emitter voltage 2SD1263a open base 300 v v ebo emitter-base voltage open collector 5 v i c collector current 0.75 a i cm collector current-peak 1.5 a t a =25 2 p c collector power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1263 2SD1263a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD1263 250 v ceo collector-emitter voltage 2SD1263a i c =30ma ,i b =0 300 v v cesat collector-emitter saturation voltage i c =1a, i b =0.2a 1.0 v v be base-emitter voltage i c =1a ; v ce =10v 1.5 v i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2SD1263 v ce =150v; i b =0 1.0 ma i ceo collector cut-off current 2SD1263a v ce =200v; i b =0 1.0 ma 2SD1263 v ce =350v; v be =0 1.0 ma i ces collector cut-off current 2SD1263a v ce =400v; v be =0 1.0 ma h fe-1 dc current gain i c =0.3a ; v ce =10v 70 250 h fe-2 dc current gain i c =1a ; v ce =10v 10 f t transition frequency i c =0.5a; v ce =5v,f=10mhz 30 mhz switching times t on turn-on time 0.5 s t s storage time 2 s t f fall time i c =1a;i b1 =-i b2 =0.1a v cc =50v 0.5 s ? h fe-1 classifications q p 70-150 120-250
inchange semiconductor product specification 3 silicon npn power transistors 2SD1263 2SD1263a package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SD1263 2SD1263a
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